The AJA Orion 3-TH Evaporator System is a thermal evaporation system, configured with 3 thermal evaporation sources. The system is restricted to evaporating metal films. It is intended for quick depositions that do not require a load lock. Below are listed standard films provided by ASRC-NanoFab. Additional metals must be approved by cleanroom staff and provided by the user.
The AJA Orion Sputtering System is a load-locked sputtering system capable of depositing metal and dielectric films over a substrate up to 6 inches in diameter. It is equipped with seven AJA high vacuum magnetron sputtering sources that are powered by two RF generators (300W) and three DC generators (750W) for single or multi-layer deposition or co-sputtering. Computer control provides recipe generation and process data storage. The max substrate is 4” with rotation 0-40RPM, radiant heating to 850˚C, and RF/DC biasing with 100W RF generator for substrate pre cleaning. Process gasses listed below are also available for reactive sputter deposition.
The AJA Orion 8E Evaporator System is capable of both electron beam (e-beam) and thermal evaporation. The system is configured with 2 thermal evaporation sources and 6 crucibles (15cc) for e-beam evaporation with automated indexing. The two thermal sources can be independently swung to a center position prior to deposition. The system is restricted to evaporating metal films. The system is also configured with substrate rotation for added uniformity, substrate cooling, a load lock, and DC biasing for substrate pre-cleaning.
Nonconducting samples placed in an electron microscope will build up charge on the surface, thereby diminishing image quality. One way to reduce the effects of surface charging is to coat the sample with a conductive material to give the electrons used to image the sample a path to ground. Sputter coating with Au or Au:Pd is one method to achieve this. Sputter coating uses ionized argon to vaporize gold atoms from a target and deposit them in a thin layer onto a sample.
The spin rinse dryer offers a fast way to clean and dry wafers in patches up to 25 wafers at a time.
The Oxford PlasmaPro System 100 PECVD is load locked tool, capable of depositing silicon oxide, silicon nitride, amorphous silicon, and other films (under staff permission). The PECVD has a 600W 13.56 MHz plasma source and has an electrically heated lower electrode, capable of a maximum temperature of 400C. Additionally, the system has a 100kHz low frequency generator connected to the top electrode. The tool is capable of processing wafers up to 8” in diameter, down to smaller wafers and chips.
The Tytan furnace stack contains four tube furnaces (two atmospheric pressure and two low pressure tubes) that are used to process batches of up to 25 6 inch or 4 inch wafers. The top tube is configured for wet or dry silicon oxidation and is equipped with a TLC clean that can be used pre-clean the tube prior to growth in order to eliminate mobile alkali ions thereby enabling the growth of high quality gate oxides at a temperature up to 1250 °C. The other three tubes are dedicated to high temperature (1250 °C) forming gas anneals, LPCVD growth of Silicon Nitride growth, and LPCVD Silicon Oxide growth using the TEOS precursor. The LPCVD TEOS process is ideal for conformal step coverage or trench refill applications.
Fiji system is a load-locked ALD system capable of both thermal and plasma-enhanced depositions of various dielectric and metallic films. The use of remote plasma activations is essential for the deposition of high quality nitrides. Also, plasma activation of oxide precursors generally enhances film nucleation on non-standard substrates.