Etch

Etching

  • Oxford Inductively Coupled Plasma Etch – Chlorine Based

    oxford-cl-icp

    The Oxford PlasmaPro System 100 Cobra is a load-locked high plasma density system which can accommodate pieces to wafers up to 6” in diameter.  The system is configured for Chlorine-based etching, including a variety of metals, dielectrics, silicon based materials, and II-V compound semiconductors.

    The system has a 600 W 13.56 MHz RF power source coupled to a solid state matching network. The active electrode is equipped with a heater/chiller and is capable of operating at temperatures varying from 0C to +80C. The Cobra process chamber walls are fitted with an electrical heating kit, allowing for warming to approximately 80C.

  • Oxford Inductively Coupled Plasma Etch – Fluorine Based

    oxford-fl-icp

    The Oxford PlasmaPro System 100 Cobra is a load-locked high plasma density system which can accommodate pieces to wafers up to 6” in diameter.  The system is configured for Fluorine-based etching, including a variety of silicon based materials and various dielectrics. The system has a 600 W 13.56 MHz RF power source coupled to a solid state matching network. The active electrode is equipped with a heater/chiller and is capable of operating at temperatures varying from 0C to +80C. The Cobra process chamber walls are fitted with an electrical heating kit, allowing for warming to approximately 80C.

  • Oxford Reactive Ion Etch

    oxford-rie

    The Oxford PlasmaPro NPG80 RIE is an open-load medium plasma density system configured for fluorine-based etch chemistries, which can accommodate pieces to wafers up to 8” in diameter and 3 cm thick. This tool is configured with a fluorine chemistry to etch silicon, its oxides and nitrides, and polymers including photoresist and silicone elastomers.

    The system has a 300 W 13.56 MHz RF power source coupled to a solid state matching network. The active electrode is equipped with a heater/chiller and is capable of operating at temperatures varying from 0_C to +80_C.

  • PVA TePla Plasma Asher

    tepla-plasma-asher

    The IoN 40 is a plasma processing system configured for etch, strip, clean and surface treatment of wafers. It is a programmable automatic instrument with a built in computer and a touch screen graphic display that enables on screen access to recipes, process follow-up and on screen editing and activation. High purity O2 and Ar are available as process gases and are supplied to the rectangular three-shelf aluminum chamber via MFC controllers. The chamber is served by a Dry Vacuum Pump Edwards XDS 35i Dry Pump. Plasma is generated by an integral auto-matched, air-cooled, 600 watts, 13.56 MHz RF generator.

  • SPTS Primaxx Vapor HF Etcher

    spts-vapor-hf-etcher

    The vapor hydrofluoric acid etcher is used primarily for isotropic etching of all types of SiO2 and offers a safer alternative to liquid- HF processes. Furthermore, the dry-HF process eliminates the stiction problems often encountered in releasing SOI-MEMS devices.

  • SPTS Xactix e1 Xenon Difluoride Etcher

    spts-xef2-etcher

    Xenon Difluoride can be used to isotropically etch Si, Ge, and Mo films. The XeF2 etch chemistry offers excellent selectivity to a wide range of materials, such as Al, SiO2, ZnO, Si3N4, and photoresist affording the possibility of using thin masks and incorporating etch-stop layers for undercutting.