Etch

Etching

  • Oxford Inductively Coupled Plasma Etch – Chlorine Based

    Oxford Inductively Coupled Plasma Etch

    The Oxford PlasmaPro System 100 Cobra is a load-locked high plasma density system which can accommodate pieces to wafers up to 6” in diameter.  The system is configured for Chlorine-based etching, including a variety of metals, dielectrics, silicon based materials, and II-V compound semiconductors.

    The system has a 600 W 13.56 MHz RF power source coupled to a solid state matching network. The active electrode is equipped with a heater/chiller and is capable of operating at temperatures varying from 0C to +80C. The Cobra process chamber walls are fitted with an electrical heating kit, allowing for warming to approximately 80C.

  • Oxford Inductively Coupled Plasma Etch – Fluorine Based

    Oxford Inductively Coupled Plasma Etch - Fluorine Based

    The Oxford PlasmaPro System 100 Cobra is a load-locked high plasma density system which can accommodate pieces to wafers up to 6” in diameter.  The system is configured for Fluorine-based etching, including a variety of silicon based materials and various dielectrics. The system has a 600 W 13.56 MHz RF power source coupled to a solid state matching network. The active electrode is equipped with a heater/chiller and is capable of operating at temperatures varying from 0C to +80C. The Cobra process chamber walls are fitted with an electrical heating kit, allowing for warming to approximately 80C.

  • Oxford Reactive Ion Etch

    Oxford Reactive Ion Etch

    The Oxford PlasmaPro NPG80 RIE is an open-load medium plasma density system configured for fluorine-based etch chemistries, which can accommodate pieces to wafers up to 8” in diameter and 3 cm thick. This tool is configured with a fluorine chemistry to etch silicon, its oxides and nitrides, and polymers including photoresist and silicone elastomers.

    The system has a 300 W 13.56 MHz RF power source coupled to a solid state matching network. The active electrode is equipped with a heater/chiller and is capable of operating at temperatures varying from 0_C to +80_C.

  • PVA TePla Plasma Asher

    PVA TePla Plasma Asher

    The IoN 40 is a plasma processing system configured for etch, strip, clean and surface treatment of wafers. It is a programmable automatic instrument with a built in computer and a touch screen graphic display that enables on screen access to recipes, process follow-up and on screen editing and activation. High purity O2 and Ar are available as process gases and are supplied to the rectangular three-shelf aluminum chamber via MFC controllers. The chamber is served by a Dry Vacuum Pump Edwards XDS 35i Dry Pump. Plasma is generated by an integral auto-matched, air-cooled, 600 watts, 13.56 MHz RF generator.

  • SPTS Primaxx Vapor HF Etcher

    SPTS Primaxx Vapor HF Etcher

    The vapor hydrofluoric acid etcher is used primarily for isotropic etching of all types of SiO2 and offers a safer alternative to liquid- HF processes. Furthermore, the dry-HF process eliminates the stiction problems often encountered in releasing SOI-MEMS devices.

  • SPTS Xactix e1 Xenon Difluoride Etcher

    SPTS Xactix e1 Xenon Difluoride Etcher

    Xenon Difluoride can be used to isotropically etch Si, Ge, and Mo films. The XeF2 etch chemistry offers excellent selectivity to a wide range of materials, such as Al, SiO2, ZnO, Si3N4, and photoresist affording the possibility of using thin masks and incorporating etch-stop layers for undercutting.