Mini Tytan 4600
LPCVD Silicon Nitride (Stoichiometric & Low Stress), LPCVD Silicon Oxide (TEOS), Thermal Anneal (Forming Gas, 1250C), Thermal Oxidation (Wet & Dry)
The Tytan furnace stack contains four tube furnaces (two atmospheric pressure and two low pressure tubes) that are used to process batches of up to 25 6 inch or 4 inch wafers. The top tube is configured for wet or dry silicon oxidation and is equipped with a TLC clean that can be used pre-clean the tube prior to growth in order to eliminate mobile alkali ions thereby enabling the growth of high quality gate oxides at a temperature up to 1250 °C. The other three tubes are dedicated to high temperature (1250 °C) forming gas anneals, LPCVD growth of Silicon Nitride growth, and LPCVD Silicon Oxide growth using the TEOS precursor. The LPCVD TEOS process is ideal for conformal step coverage or trench refill applications.